TSM6502CR RLG

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Overview of TSM6502CR RLG

Part NumberTSM6502CR RLG
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N/P-CH 60V 24A/18A 8PDFN
DatasheetsDownload TSM6502CR RLG Datasheet PDFPDF Icon
Price for TSM6502CR RLG

Specification of TSM6502CR RLG

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Taiwan Semiconductor Corporation
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25C
24A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs
34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
10.3nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1159pF @ 30V, 930pF @ 30V
Power - Max
40W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-PDFN (5x6)

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